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A Technical Foundation for RF CMOS Power Amplifiers: Part 4: Misunderstandings in PA Design

机译:RF CMOS功率放大器的技术基础:第4部分:PA设计中的误解

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摘要

This fourth part of the article series "A Technical Foundation for RF CMOS Power Amplifiers" [1] presents five misunderstandings regarding wireless signals and amplifier design that persist in the literature and generally cause confusion, particularly for engineers new to this art. Each of these misunderstandings is addressed for its realistic answer along with additional discussion about why addressing that misunderstanding matters. At the end, four fundamental technical foundations are identified that can reliably be used to check and validate ideas and approaches during design and development projects.
机译:文章系列“ RF CMOS功率放大器的技术基础”的第4部分[1]提出了关于无线信号和放大器设计的五个误解,这些误解在文献中一直存在,并且通常会引起混淆,特别是对于本领域的新​​手而言。这些误解中的每一个都针对其现实的答案,以及有关为何解决该误解很重要的附加讨论。最后,确定了可以在设计和开发项目中可靠地用于检查和验证思想和方法的四个基本技术基础。

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