Virtual-ground sensing techniques for a 49-ns/200-MHz access time 1.8-V 256-Mb 2-bit-per-cell flash memory

摘要

Fast and accurate read operation in 1.8-V 2-bit-per-cell virtual-ground flash memories requires techniques to substantially reduce the read margin loss due to the side-leakage current and the complementary-bit disturbance. The read margin loss caused by the combination effect of these two disturbance mechanisms is serious enough to eliminate the read margin window, which is already small when the power supply voltage is about 1.8 V and when a memory cell stores 2 bits. This paper introduces for the first time the sense current recovery technique to counteract the side-leakage current effect and the differential feedback cascoded bitline control technique to minimize the complementary-bit disturbance. A 1.8-V 256-Mb 2-bit-per-cell virtual-ground flash memory employing the two techniques has been integrated using 0.13-Μm CMOS technology. These two sensing techniques are essential for the memory to achieve 49-ns initial read access and 200-MHz internal burst read access. The die size is 52 mm2 and the cell size is 0.121 Μm2.