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首页> 外文期刊>IEEE Journal of Solid-State Circuits >$V_rm DD$-Hopping Accelerators for On-Chip Power Supply Circuit to Achieve Nanosecond-Order Transient Time
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$V_rm DD$-Hopping Accelerators for On-Chip Power Supply Circuit to Achieve Nanosecond-Order Transient Time

机译:用于片上电源电路的$ V_rm DD $-跳频加速器,实现纳秒级瞬态时间

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摘要

A VDD-hopping accelerator for on-chip power supply circuits is proposed and the effectiveness of the accelerator circuit is experimentally verified. The quick dropper with the linear regulator enables nanosecond-order transient time in on-chip distributed power supply systems. The measured transition time is less than 5 ns with a load circuit equivalent to 25-k logic gates in 0.18-mum CMOS. This is to be compared with the case without the accelerator of the order of mus and thus the acceleration by two orders of magnitude is achieved. Extensions of the basic approach are also discussed including implementation of the quick dropper for a switching DC-DC converter, the control stability improvement, automatic timing generation, and the parasitic element effects of the power lines
机译:提出了一种用于片上电源电路的VDD跳跃加速器,并通过实验验证了该加速器电路的有效性。具有线性稳压器的快速滴管可在片上分布式电源系统中实现纳秒级的瞬态时间。负载电路等效于0.18微米CMOS中的25 k逻辑门,测得的过渡时间小于5 ns。将其与不具有μs数量级的加速器的情况进行比较,从而实现了两个数量级的加速。还讨论了基本方法的扩展,包括用于开关DC-DC转换器的快速降压器的实现,控制稳定性的改进,自动定时生成以及电力线的寄生元件影响。

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