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A Pipeline SAR ADC With Second-Order Interstage Gain Error Shaping

机译:管道SAR ADC具有二阶级间增益误形状

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This article presents an interstage gain error shaping (GES) technique that can substantially suppress the in-band quantization leakage error caused by the interstage gain error in pipeline analog-to-digital converters (ADCs). It works for both closed-loop and open-loop amplification. It does not require extra clock phases, long convergence time or an interruption of the digitization, incur large power or area overhead, or pose a constraint on the input signal. A prototype ADC equipped with the proposed second-order GES technique in 40-nm CMOS achieves a 75.8-dB signal-to-noiseand-distortion ratio (SNDR) over 12.5-MHz bandwidth while operating at 100 MS/s and consuming 1.54 mW. It achieves 174.9-dB Schreier figure of merit (FoM). The GES-related hardware only occupies less than 2% of the total active area.
机译:本文介绍了一个级间增益误差整形(GES)技术,其可以大大抑制管道模数转换器(ADC)中的级间增益误差引起的带内量化泄漏误差。它适用于闭环和开环放大。它不需要额外的时钟阶段,长收敛时间或数字化的中断,引起大功率或区域开销,或对输入信号构成约束。在40-nm CMOS中配备了所提出的二阶GES技术的原型ADC,在100ms / s下运行并消耗1.54 MW的同时,在12.5-MHz带宽上实现75.8-dB信号 - 到噪声失真率(SNDR)。它达到了174.9 dB施莱尔的优点(FOM)。 GES相关硬件仅占总活动区域的不到2%。

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