首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 0.2–1.45-GHz Subsampling Fractional- N Digital MDLL With Zero-Offset Aperture PD-Based Spur Cancellation and In Situ Static Phase Offset Detection
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A 0.2–1.45-GHz Subsampling Fractional- N Digital MDLL With Zero-Offset Aperture PD-Based Spur Cancellation and In Situ Static Phase Offset Detection

机译:具有零偏移孔径基于PD的杂散消除和原位静态相位偏移检测的0.2–1.45-GHz二次采样小数N分数字MDLL

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摘要

A digital fractional- N subsampling multiplying delay-locked loop is proposed in this paper. A zero phase-offset latch-based aperture phase detector is introduced in a reference spur cancellation loop to precisely cancel any static phase offset (SPO) between the injected reference and the digitally controlled oscillator (DCO) phases. An in situ detection scheme is employed to directly measure this phase offset accurately by obviating the requirement of a high-speed off-chip measurement setup. Moreover, a mathematical expression is derived for the calculation of reference spur generated from a given SPO. A uniformly distributed switched capacitor-based DCO frequency tuning achieves highly linear gain. The chip prototype is fabricated in a 1.2-V supply, 65-nm LP CMOS technology and covers an output frequency range of 0.2–1.45 GHz while occupying a core area of 0.054 mm2. Measured phase noise at 1.4175 GHz is −95 dBc/Hz at 100-kHz offset, which is 9 dB lower than in phase-locked loop mode of operation.
机译:本文提出了一种数字小数N分采样乘法延迟锁定环。在基准杂散消除环路中引入了基于零相位偏移的基于锁存的孔径相位检测器,以精确消除注入的基准和数控振荡器(DCO)相位之间的任何静态相位偏移(SPO)。通过避免高速芯片外测量设置的要求,采用原位检测方案直接准确地测量此相位偏移。此外,推导了数学表达式,用于计算从给定SPO生成的参考杂散。基于均匀分布的开关电容器的DCO频率调谐可实现高度线性增益。该芯片原型采用1.2V电源,65 nm LP CMOS技术制造,覆盖0.2-1.45 GHz的输出频率范围,而核心面积为0.054 mm2。在100kHz偏移下,在1.4175 GHz处测得的相位噪声为−95 dBc / Hz,比锁相环工作模式低9 dB。

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