Enhanced open-circuit voltage in p-type passivated emitter and rear cell by doped polysilicon layer as passivation contact

摘要

The most promising and feasible approach to achieving high-efficiency silicon solar cells must be passivation contact compatible with current homojunction thermal processes. In this paper, an easy-to-implement carrier-selective passivation contact with doped poly-Si/SiOx for produing p-type passivated emitter and rear cell (PERC) was proposed. The passivation contact structure consisted of an ultra-thin SiOx layer capped with an intrinsic amorphous silicon (a-Si) layer prepared by low pressure chemical vapor deposition, which was deposited onto a p-type silicon substrate and then was doped and re-crystallized by a thermal phosphorus diffusion at 850 degrees C for 75 min. By optimizing the diffusion profile and cleaning time, a low dark recombination current density J(0) approximate to 3 fA/cm(2) and large minority carrier lifetime of 3000 mu s were achieved on the 180-pm-thick n-type wafers with a resistivity of 3 Omega.cm, corresponding to an implied open-circuit voltage of 700 mV. P-type PERC cells with the highly doped poly-Si/SiOx passivated emitter demonstrated 683.97 mV of open-circuit voltage, showing more than 10 mV enhancement comparing with regular PERC cells. The results demonstrated an attractive potential of the carrier-selective passivation contacts with doped poly-Si/SiOx under front metallizatin area in photovoltaic application.