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首页> 外文期刊>IEEE sensors journal >A CMOS-MEMS Resonator Integrated System for Oscillator Application
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A CMOS-MEMS Resonator Integrated System for Oscillator Application

机译:用于振荡器的CMOS-MEMS谐振器集成系统

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This paper focuses on the design and development of a CMOS-MEMS resonator integrated with an on-chip amplifier with emphasis on its single-chip frequency reference oscillator implementation. A flexural-mode ring resonator with a desired mode shape featuring an inherent fully-differential mode of mechanical operation is designed using both analytical and finite element models. Two such resonators in low- and high-frequency domains, centered at 1.39 and 9.34 MHz respectively, are individually modeled using first principals, equations, and simulation tools to evaluate and improve device performance. In this paper, the device is also shown to offer a potential benefit of capacitive feedthrough cancelation up to 30 dB attributed to differential signaling scheme. Subsequently, both rapidly prototyped devices integrated with their on-chip transimpedance amplifiers are demonstrated using a commercially available TSMC 0.35-$mu{rm m}$ CMOS technology. A low-frequency resonator integrated with its on-chip amplifier exhibited decent overall performance capabilities in terms of much higher transmission spectra (closer to 0 dB), greater feedthrough suppression, higher signal-to-feedthrough ratio (35 dB), and exact phase shift (0$^{circ}$) at resonance frequency, therefore being a potential candidate for a single-chip oscillator system.
机译:本文重点介绍集成有片上放大器的CMOS-MEMS谐振器的设计和开发,重点是其单芯片频率参考振荡器的实现。使用解析和有限元模型设计了具有所需模式形状的弯曲模式环形谐振器,该模式具有固有的机械操作固有的全差分模式。使用第一原理,方程式和仿真工具分别对两个分别位于1.39和9.34 MHz中心的低频和高频谐振器进行建模,以评估和改善器件性能。在本文中,该器件还显示出可提供归因于差分信令方案的高达30 dB的电容馈通消除的潜在优势。随后,使用市售的TSMC 0.35- $ mu {rm m} $ 展示了与它们的片上跨阻放大器集成在一起的两个快速原型设备。 CMOS技术。集成有片上放大器的低频谐振器在更高的传输频谱(更接近0 dB),更大的馈通抑制,更高的信噪比(35 dB)以及精确的相位方面表现出不错的整体性能在共振频率上偏移(0 $ ^ {circ} $ ),因此是单芯片振荡器系统的潜在候选者。

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