Surface passivation of silicon solar cells using plasma-enhanced chemical-vapour-deposited SiN films and thin thermal SiO_2/Plasma SiN stacks

摘要

Two different techniques for the electronic surface passivation of silicon solar cells, the plasma-enhanced chemical vapour deposition of silicon nitride (SiN) and the fabrication of thin thermal silicon oxide/plasma SiN stack structures, are investigated. It is demonstrated that, despite their low thermal budget, both techniques are capable of giving an outstanding surface passivation quality on the low-resistivity (～ 1 Ω cm) p-Si base as well as on n+-diffused solar cell emitters with the oxideitride stacks showing a much better thermal stability. Both techniques are then applied to fabricate front- and rear-passivated silicon solar cells. Open-circuit voltages in the vicinity of 670 mV are obtained with both passivation techniques on float-zone single-crystalline silicon wafers, demonstrating the outstanding surface passivation quality of the applied passivation schemes on real devices. All-SiN passivated multicrystalline silicon solar cells achieve an open-circuit voltage of 655 mV which is amongst the highest open-circuit voltages attained on this kind of substrate material. The high open-circuit voltage of the multicrystalline silicon solar cells results not only from the excellent degree of surface passivation but also from the ability of the cell fabrication to maintain a relatively high bulk lifetime (＞20 μs) due to the low thermal budget of the surface passivation process.