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Analysis of AlGaAs/GaAs/InGaAs n-type step multiple quantum wells for the optimization of normal incident absorption

机译:分析AlGaAs / GaAs / InGaAs n型阶梯多量子阱以优化法向入射吸收

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摘要

The response to normal incident radiation in n-type Γ square quantum wells (QWs) is generally expected to be very small because, in the framework of the effective mass model, the parity selection rule of the envelope wavefunctions essentially forbids intersubband transitions induced by transverse electric polarized radiation. This problem can be overcome by employing an asymmetrical QW. In this paper, the effect of asymmetry, and the result of band mixing with the p-like valence and conduction bands due to the truncation of bulk crystal periodicity, of an n-type AlGaAs/GaAs/InGaAs step multiple QW, are analysed using a new 14-band k·p model with envelope function approximation.
机译:通常预期n型Γ方形量子阱(QW)中的法向入射辐射的响应非常小,因为在有效质量模型的框架中,包络波函数的奇偶性选择规则基本上禁止了由横向引起的子带间跃迁电极化辐射。通过采用非对称QW可以解决此问题。本文分析了n型AlGaAs / GaAs / InGaAs阶梯多重QW的不对称效应以及由于体晶周期的截断而与p型价态和导带的能带混合结果一个具有包络函数近似的新的14频段k·p模型。

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