Optoelectrical properties of electrodeposited Cd_xHg_(1-x)Te with a bandgap energy of 1.35 eV

摘要

Cadmium mercury telluride with a bandgap energy of 1.35 eV has been electrodeposited on a stainless-steel substrate. We briefly discuss the deposition and structure of the film. Gold Schottky diodes have been fabricated for the characterization of the material using various optoelectrical techniques. Among these are the bias dependence of the junction photocurrent and capacitance (in the dark and under illumination), the temperature dependence of the built-in potential and the bandgap energy, and the photo-induced current transient spectroscopy. In this paper, we reveal that the material has a resistivity in the range of 10~5 Ω cm and a donor concentration of 1 × 10~(15) cm~(-3).