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首页> 外文期刊>Semiconductor science and technology >Electron spin-orbit splitting in a InGaAs/InP quantum well studied by means of the weak-antilocalization and spin-zero effects in tilted magnetic fields
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Electron spin-orbit splitting in a InGaAs/InP quantum well studied by means of the weak-antilocalization and spin-zero effects in tilted magnetic fields

机译:利用倾斜磁场中的弱反定位和自旋零效应研究了InGaAs / InP量子阱中的电子自旋轨道分裂

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摘要

The coupling between Zeeman spin splitting and Rashba spin-orbit terms has been studied experimentally in a gated InGaAs/InP quantum-well structure by means of simultaneous measurements of the weak antilocalization (WAL) effect and beating in the Shubnikov-de Haas (SdH) oscillations. The strength of the Zeeman splitting was regulated by tilting the magnetic field with the spin-zeros in the SdH oscillations, which are not always present, being enhanced by the tilt. In tilted fields, the spin-orbit and Zeeman splittings are not additive, and a simple expression is given for the energy levels. The Rashba parameter and the electron g-factor were extracted from the position of the spin zeros in tilted fields. A good agreement is obtained for the spin-orbit coupling strength from the spin zeros and WAL measurements.
机译:通过同时测量弱反定位(WAL)效应和Shubnikov-de Haas(SdH)中的跳动,已在门InGaAs / InP量子阱结构中通过实验研究了塞曼自旋分裂和Rashba自旋轨道项之间的耦合。振荡。 Zeeman分裂的强度是通过倾斜磁场来调节的,而磁场在SdH振荡中的自旋零点并不总是存在,而是通过倾斜而增强。在倾斜场中,自旋轨道和塞曼分裂不是可加的,并且给出了能级的简单表达式。从倾斜场中自旋零的位置提取Rashba参数和电子g因子。通过自旋零和WAL测量获得自旋轨道耦合强度的良好协议。

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