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Correlation between the low-temperature PL spectra and Cd0.9Zn0.1Te quality

机译:低温PL光谱与Cd0.9Zn0.1Te质量的相关性

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摘要

The low-temperature photoluminescence (PL) measurements revealed that Cd(0.9)Zno(0.1)Te PL spectra consisted of three regions: the near-band-edge region with an emission peak I-0 situated at 1.66 eV related to the free and bound excitons, the donor-acceptor region with an emission peak I-1 centred at 1.62 eV related to the impurities, and a defect-band region with an emission peak I-2 centred at 1.50 eV due to the dislocations. The near-band-edge region was dominated by the donor bound exciton peak (I-0) for high-quality Cd0.9Zn0.1Te, but dominated by the acceptor bound exciton peak for low-quality Cd0.9Zn0.1Te. For all high- and low-quality Cd0.9Zn0.1Te, the full width at half maximum of I-0 can be used to evaluate the overall quality of the crystal, and the PL peak intensity ratios of I-1/I-0 and I-2/I-0 could be employed to reflect the impurity concentration and dislocation density of the crystal, respectively.
机译:低温光致发光(PL)测量表明Cd(0.9)Zno(0.1)Te PL光谱包括三个区域:发射峰I-0位于1.66 eV的近带边缘区域,与自由峰和自由峰有关。结合的激子,由于位错,发射峰I-1的中心为与杂质相关的1.62 eV,缺陷带区的发射峰I-2的中心为1.50 eV。对于高质量Cd0.9Zn0.1Te,近带边缘区域受供体结合的激子峰(I-0)支配,而对于低质量Cd0.9Zn0.1Te,受主结合激子峰的支配。对于所有高品质和低品质的Cd0.9Zn0.1Te,I-0的半峰全宽可用于评估晶体的整体质量,以及I-1 / I-0的PL峰强度比I-2 / I-0和I-2 / I-0可分别用来反映晶体的杂质浓度和位错密度。

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