Optical and structural properties of implanted Si wafers: the effects of implantation energy and subsequent isochronal annealing temperature

摘要

We have studied the influence of implantation energy and subsequent isochronal annealing temperature on the optical and structural properties of implanted Si wafers employing a multiwavelength spectroscopic ellipsometer. A temperature-dependent multilayer optical model is used to explain the ellipsometric data for all implantation energies (20 to 180 keV) and annealing temperatures (300 to 1100℃) of this work. This work completely characterizes the structural and optical properties of these implanted samples via the pseudodielectric functions and the integrated damage depth profile. For the highest implantation sample self-annealing phenomena have appeared, reducing the integrated damage depth profile. Finally, the dynamics of isochronal annealing temperature on the integrated damage depth profile of these wafers exhibit an abrupt drop in the transition temperature where a long-range ordering is obtained and pseudodielectric functions approach the crystallinity shapes.