A SiGe impulse generator for single-band ultra-wideband applications

摘要

A compact 0.56 mm x 0.56 mm SiGe HBT impulse generator for single-band ultra-wideband applications is presented. The generated impulse shape is similar to the first derivative of the Gaussian bell shape with adjustable peak-to-peak amplitudes of up to 530 mV. Both on-wafer measurements and measurements of the mounted chip show a corresponding impulse spectrum which is centred around 5.7 GHz. The device is capable of operating in low-data rate systems as well as in burst-mode applications with extremely short impulse repetition rates and is ideally suited for a large variety of single-band ultra-wideband applications.