The growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications

摘要

A process for the growth of uniform boron-doped Si/SiGe multiple quantum wells by rapid thermal chemical vapour deposition for studying intersubband transitions for quantum cascade laser applications has been developed. The doping density profiles are extremely sharp (～2 nm/decade and ～3 nm/decade for the leading and trailing boron edges, respectively) measured by high resolution secondary ion mass spectroscopy, and the well-to-well uniformity is excellent. A higher temperature is used for the silicon layers (625℃) compared to the SiGe layers (525℃) to keep the growth rate of both layers in the range of 0.1 nm s~(-1).