The high growth rate of epitaxial silicon-carbon alloys by using chemical vapour deposition and neopentasilane

摘要

The growth of epitaxy of silicon-carbon (Si_(1-y)C_y) alloy layers on (1 0 0) silicon substrates by chemical vapour deposition (CVD) with a novel precursor, neopentasilane, as the silicon source gas and methylsilane as the carbon source is reported. High quality Si_(1-y)C_y alloy layers at growth rates of 18 nm min~(-1) and 13 nm min~(-1) for fully substitutional carbon levels of 1.8% and 2.1%, respectively, were achieved. The highest substitutional carbon level achieved was 2.6% (strained perpendicular lattice constant of 5.347 A) as determined by x-ray diffraction.