机译:基于单电子晶体管技术的逻辑门能量效率比较研究
School of Electrical Engineering, Kookmin University, 861-1, Jeongneung-dong, Seongbuk-gu,Seoul 136-702, Korea;
School of Electrical Engineering, Kookmin University, 861-1, Jeongneung-dong, Seongbuk-gu,Seoul 136-702, Korea;
School of Electrical Engineering, Kookmin University, 861-1, Jeongneung-dong, Seongbuk-gu,Seoul 136-702, Korea;
Department of Electronics and Communications Engineering, Kwangwoon University, Seoul 139-701,Korea;
Departement of Chemical & Biological Engineering, Gyeongsang National University, Gyeongnam 660-701, Korea;
School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Korea;
School of Electrical Engineering, Kookmin University, 861-1, Jeongneung-dong, Seongbuk-gu,Seoul 136-702, Korea;
School of Electrical Engineering, Kookmin University, 861-1, Jeongneung-dong, Seongbuk-gu,Seoul 136-702, Korea;
机译:非理想效应的单电子晶体管二元全加器的能效比较研究
机译:基于室温硅量子点的单电子晶体管逻辑门的建模与分析
机译:逻辑应用的硅基双栅极单电子晶体管
机译:基于生气和硅离散晶体管基准转换器的效率比较工作台研究
机译:电荷陷阱晶体管(CTT):将逻辑晶体管转换为高级高k /金属门CMOS技术的嵌入式非易失性存储器
机译:具有有机和无机混合钝化层的化学组装单电子晶体管上的三输入门逻辑电路
机译:独立双栅晶体管中数字逻辑门的TCAD模拟 - 传统和无连接FET的比较研究