Physical Properties Of Bi_2te_3 And Sb_2te_3 Films Deposited By Close Space Vapor Transport

摘要

Near-stoichiometric bismuth telluride (Bi_2Te_3) and antimony telluride (Sb_2Te_3) films were grown by the close space vapor transport (CSVT) method in a relatively simple fashion. The dependence of the film properties on the substrate temperature was explored over a wide range by keeping the source-to-substrate thermal gradient fixed at 300 ℃ and 350 ℃ for the Bi_2Te_3 and Sb_2Te_3 film growth, respectively. A Seebeck coefficient (α) of 255 μV K~(-1) and a power factor of 20.5 × 10~(-4) W K~(-2) m~(-1) were obtained for Bi_2Te_3 at a substrate temperature of 350 ℃; meanwhile, the maxima of the above parameters for the antimony telluride films (108 μV K~(-1) and 3.8 × 10~(-4) W K~(-2) m~(-1), respectively) were reached at a substrate temperature of 450 ℃.