Resonance Coulomb Scattering By Shallow Donor Impurities In GaAs And InP

摘要

We report a theoretical study on characteristics of the Coulomb scattering of conduction electrons by donor centers in GaAs and InP, taking into account the influence of resonance states. The resonance states occur through the polar interaction of electrons with the longitudinal optical phonons. The obtained spectra of the total and transport Coulomb scattering cross-sections exhibit asymmetric resonance peculiarities in the vicinity of the resonance energy. It is shown that these peculiarities are no small effect: near the resonance energy the cross-sections may largely differ from the corresponding values for a regular Rutherford scattering.