Voltage-controlled spin precession in InAs quantum wells

摘要

In this work we investigate spin diffusion in InAs quantum wells with the Rashba spin-orbit coupling modulated by a gate voltage. The gate-voltage dependence of spin diffusion under different temperatures is studied with all the scattering explicitly included. Our result partially supports the claim of the realization of the Datta-Das spin-injected field effect-transistor by Koo et al (2009 Science 325 1515). We also show that the scattering plays an important role in spin diffusion in such a system. (Some figures in this article are in colour only in the electronic version)