机译:硅中超浅结形成下的受激氧杂质吸收
V. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, 41 Prospect Nauki, 03028 Kyiv, Ukraine;
V. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, 41 Prospect Nauki, 03028 Kyiv, Ukraine;
V. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, 41 Prospect Nauki, 03028 Kyiv, Ukraine;
V. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, 41 Prospect Nauki, 03028 Kyiv, Ukraine;
V. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, 41 Prospect Nauki, 03028 Kyiv, Ukraine;
V. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, 41 Prospect Nauki, 03028 Kyiv, Ukraine;
V. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, 41 Prospect Nauki, 03028 Kyiv, Ukraine;
V. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, 41 Prospect Nauki, 03028 Kyiv, Ukraine;
Department of Solid State Sciences, Ghent University, Krijgslaan 281 SI, B-9000 Ghent, Belgium;
ion implantation; impurities; p-n junctions; annealing; depth profile; oxygen; arsenic; gettering;
机译:用于CMOS图像传感器的C3H5碳簇离子注入硅晶片的近乎吸杂:过渡金属,氧和氢杂质的吸杂效应(第55卷,121301,2016)
机译:用于CMOS图像传感器的C3H5碳簇离子注入硅晶片的近乎吸杂:过渡金属,氧和氢杂质的吸杂作用
机译:插入氧层对硼,磷和砷在硅中扩散的影响,形成超浅结
机译:硅超浅接线形成下杂质再分配的特性
机译:光伏多晶硅中晶界杂质吸收和钝化的层次结构。
机译:使用牺牲多孔硅层的多晶硅磷扩散吸杂工艺
机译:硅中超浅结形成过程中氧的重新分布机理