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机译:Co掺杂非晶碳与GaAs之间的接触和光电导特性:n型低电阻率和半绝缘高电阻率GaAs
Huaiyin Normal Univ, Huaian Key Lab Funct Mat Informat, Huaian 223300, Peoples R China|Huaiyin Normal Univ, Jiangsu Key Lab Chem Low Dimens Mat, Huaian 223300, Peoples R China|Nanjing Univ, Lab Solid State Microstruct, Sch Phys, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China;
Huaiyin Normal Univ, Huaian Key Lab Funct Mat Informat, Huaian 223300, Peoples R China|Huaiyin Normal Univ, Jiangsu Key Lab Chem Low Dimens Mat, Huaian 223300, Peoples R China;
Huaiyin Normal Univ, Huaian Key Lab Funct Mat Informat, Huaian 223300, Peoples R China|Huaiyin Normal Univ, Jiangsu Key Lab Chem Low Dimens Mat, Huaian 223300, Peoples R China;
Huaiyin Normal Univ, Huaian Key Lab Funct Mat Informat, Huaian 223300, Peoples R China|Huaiyin Normal Univ, Jiangsu Key Lab Chem Low Dimens Mat, Huaian 223300, Peoples R China;
Huaiyin Normal Univ, Huaian Key Lab Funct Mat Informat, Huaian 223300, Peoples R China|Huaiyin Normal Univ, Jiangsu Key Lab Chem Low Dimens Mat, Huaian 223300, Peoples R China;
Nanjing Univ, Lab Solid State Microstruct, Sch Phys, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China;
Nanjing Univ, Lab Solid State Microstruct, Sch Phys, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China;
Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China;
Co doped amorphous carbon films; GaAs; p-n junction; ohmic contact; Schottky junction; photosensitivity;
机译:通过快速热退火处理的低耐碳掺杂N型IngaAsbi薄膜的低抗性欧姆触点的表征
机译:用于AlGaAs / GaAs HBT的n型InGaAs的Pd / Si基欧姆接触
机译:用于AlGaAs / GaAs HBT的n型InGaAs的Pd / Ge(或Si)/ Pd / Ti / Au欧姆接触
机译:AlGaAs / GaAs HBT的Pd / Ge / Ti / Pt和Pd / Si / Ti / Pt欧姆接触与N型InGaAs的比较
机译:GaAs /(Ga,Al)As多量子阱和块状GaAs中的热电子光电导率
机译:在n型GaAs(111)B衬底上生长的p掺杂GaAs纳米线阵列的光伏性能
机译:在基于InP的光子膜的重掺杂n型InGaAs和InGaAsP上具有超低光学损耗的欧姆接触
机译:用于高寿命光学激活,高增益Gaas211光电导半导体开关的掺杂触点