Bandgap tuning in GaAs1-xSbx axial nanowires grown by Ga-assisted molecular beam epitaxy

摘要

In this work we present a comprehensive study on the effects of Sb incorporation on the composition modulation, structural and optical properties of self-assisted axial GaAs1-xSbx nanowires of 2-6 mu m in length grown on (111) Si substrate by molecular beam epitaxy. The Sb composition in the GaAs1-xSbx axial nanowire (NW) was varied from 2.8-16 at.%, as determined from energy dispersive x-ray spectroscopy. Lower Sb composition leads to thinner nanowires and inhomogeneous Sb composition distribution radially with a depleted Sb surface region inducing weak type-II optical emission, the presence of an additional peak at higher Bragg angle in the x-ray diffraction spectra and an electric-field-induced strong Raman LO mode. Higher Sb composition of 16 at.% leads to a more uniform Sb compositional distribution radially leading to type-I optical transitions exhibiting the lowest PL peak energy occurring at 1.13 eV. In addition, the high quality of these nanowires exhibiting pure zinc blende crystal structure, largely free of any planar defects, is borne out by high resolution transmission electron microscopy and selected area diffraction patterns. The shift and broadening of the Raman LO and TO modes reveal evidence of increased Sb incorporation in the nanowires. Significant improvement in optical characteristics was achieved by the incorporation of a Al0.2Ga0.8As passivating shell. The results are very promising and reveal the potential to further red shift the optical emission wavelength by fine tuning of the fluxes during growth.