机译:铝注入轴上4H-SiC MOSFET
IMB CNM CSIC C Tillers, Campus UAB, E-08193 Bellaterra, Spain;
IMB CNM CSIC C Tillers, Campus UAB, E-08193 Bellaterra, Spain;
IMB CNM CSIC C Tillers, Campus UAB, E-08193 Bellaterra, Spain;
IMB CNM CSIC C Tillers, Campus UAB, E-08193 Bellaterra, Spain;
CALY Technol, 56 Blvd Niels Bohr, F-69100 Villeurbanne, France;
Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden;
IMB CNM CSIC C Tillers, Campus UAB, E-08193 Bellaterra, Spain;
4H-SiC; on-axis; MOSFET; Al-implanted; electrical characterization; time bias stress instability; gate oxide;
机译:在不使用外延层的情况下在轴半绝缘衬底上制备4H-SiC横向双注入MOSFET
机译:TCAD测量TCAD建模综合4H-SiC的补偿比的测定
机译:通过光产生的载体效应,用低载体浓度的载体浓度的载体浓度的拉曼表征
机译:机械应激诱导的4H-SiC(0001)NMOSFET的电气特性的异常变化,在Al植入的p型井上制造
机译:1.2 kV 4H-SiC平面栅极功率MOSFET的设计,分析和优化,用于改进的高频切换
机译:在不同的注入后退火后p型铝注入的4H-SiC层上的欧姆接触
机译:4H-SIC MOSFET中SIO2 / 4H-SIC接口的表征:综述