Theoretical studies of the g factor of V~3+ in III-V semiconductors

摘要

A two spin-orbit coupling parameter model based on a cluster approach is presented in this paper for the calculations of the g factor for V~3+ ions in the cation sites of GaP InP and GaAs crystals. In this model, differing from the conventional one spin-orbit coupling parameter model, both the contributions from the spin--orbit coupling of the central 3d~2 ion and those of ligand ions are included. By using the parameters obtained from the optical spectra of the studied crystals, the calculated g shifts (g - 2.0023) are in good agreement with the observed values. Various contributions to the g shift are discussed.