Optimizing RTA Ramp Rate for Ultrashallow Junctions

摘要

Technology nodes of 0.13 μm and below demand sub-50 nm junctions that also have very low sheet resistance. This requires, in addition to reducing the dopant implantation energy, minimizing the annealing thermal budget by using a fast-ramping rapid thermal anneal [RTA). A fast-ramp RTA is also expected to reduce transient-enhanced diffusion (TED) of boron, which results from the interaction of the implantation damage with dopant.