New Approaches to Fabricating Metal Gates

摘要

The trend in advanced gate stack technology is clearly far from the traditional approach of a gate electrode of heavily doped polysilicon on top of a gate dielectric made of silicon dioxide or silicon oxynitride (SiON). Although these materials are fabrication-friendly, much better performance in terms of improved transistor speed and reduced current leakage can be obtained by switching to a metal gate and a high-k gate dielectric.