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Development and theoretical analysis of novel center-inlet computer-controlled polishing process for high-efficiency polishing of optical surfaces

机译:用于光学表面高效抛光的新型中心入口计算机控制抛光工艺的开发和理论分析

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摘要

Although traditional computer-controlled optical surfacing (CCOS) technology has been successfully developed for polishing large aspheric optics, the polishing process continues to pose several challenges, including polishing tool wear and uneven distribution of polishing particles in contact areas. To improve the efficiency and stability of the polishing process, we present a novel center-inlet computer-controlled polishing (CCCP) process and tool for high-efficiency polishing of large-diameter aspheric optics. Compared with traditional CCOS, the most distinctive feature of CCCP is that the polishing slurry is supplied by the central hole of the polishing tool to improve its utilization efficiency. Moreover, a flexible coupling is used to connect the tool and motorized spindle to keep the tool in parallel with the work surface during the polishing process. The experimental apparatus and optimization design of the CCCP tool were first constructed based on CCOS. Then, the material removal mechanisms were explained by a series of theoretical and experimental studies. Results indicated that CCCP can improve the wear resistance of the polishing pad and make fuller and more even abrasive grain supply compared with traditional CCOS. The innovative theoretical model was verified and used for optimizing the epicyclic tool motion in CCCP. The experiments indicated that CCCP can produce a higher material removal rate and a better surface state than can CCOS.
机译:尽管已经成功开发出了用于抛光大型非球面光学器件的传统计算机控制光学表面(CCOS)技术,但抛光工艺仍面临着一些挑战,包括抛光工具的磨损以及接触区域中抛光颗粒的不均匀分布。为了提高抛光过程的效率和稳定性,我们提出了一种新颖的中心入口计算机控制抛光(CCCP)工艺和工具,用于大直径非球面光学器件的高效抛光。与传统的CCOS相比,CCCP的最显着特点是抛光浆由抛光工具的中心孔提供,以提高其利用率。此外,在抛光过程中,使用挠性联轴器连接工具和电动主轴,以使工具与工作表面保持平行。首先基于CCOS构建了CCCP工具的实验装置和优化设计。然后,通过一系列的理论和实验研究解释了材料去除的机理。结果表明,与传统的CCOS相比,CCCP可以提高抛光垫的耐磨性,并提供更充分,更均匀的磨料。验证了创新的理论模型,并将其用于优化CCCP中的周转刀具运动。实验表明,与CCOS相比,CCCP可以产生更高的材料去除率和更好的表面状态。

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