Research Disclosure

摘要

This research disclosure relates to a patterning device. The patterning device may be used by a lithographic apparatus, for example an extreme ultraviolet (EUV) lithographic apparatus. Figure 1 schematically depicts a lithographic apparatus. The lithographic apparatus includes a radiation source, which generates a radiation beam, such as an EUV beam. The radiation beam passes from the radiation source into an illumination system of the lithographic apparatus, which is configured to condition the radiation beam. The illumination system may include a plurality of optical components, such as for example a first mirror and a second mirror. The optical components provide the radiation beam with a desired cross-sectional shape and a desired angular intensity distribution. The radiation beam passes from the illumination system to a patterning device, such as a mask, held by a support structure. The patterning device reflects and patterns the radiation beam. The patterning device may comprise a reticle. Following reflection from the patterning device, the patterned radiation beam enters a projection system of the lithographic apparatus. The projection system comprises a plurality of optical components, such as a third mirror and a fourth mirror, which are configured to project the radiation beam through an exposure slit onto a substrate, such as for example a wafer, held by a substrate table.