Research Disclosure

摘要

This research disclosure relates to the use of silicon oxide as a protective layer for reticles in a plasma environment, particularly but not exclusively, in an EUV-induced plasma environment. The EUV-nduced plasma environment may be inside an EUV lithographic apparatus. Lithographic scanners, in particular EUV scanners, include a patterning device (e.g. a mask or reticle). Radiation is provided through or reflccted off the patterning device to form an image on a substrate. As depicted in Figure I below, the reticle is formed as a stack of alternating layers of silicon and nolybdenum, and may include some intermixing layers between the silicon and molybdenum layers. The top layer may be a ruthenium protective layer.