Novel and better C02 laser aperture designs

摘要

In EUV lithography, EUV light (e.g., at or around 13.5nm wavelength) is generated by a laser produced plasma (LPP) source. At its most basic, an LPP source functions by exciting a fuel (such as tin) using an infrared (IR) light (at or around 10.6μm wavelength) which is produced by a CO_2; drive laser. This EUV light is used to expose a pattern into photoresist on a wafer. IPP light source systems typically comprise three major subsystems: the CO_2 drive laser, a beam transport system (BTS) and a source vessel.