Deposition of highly pure hydrogenated amorphous silicon

摘要

We have challenged a reduction of the impurity contents in hydrogenated amorphous silicon (a-Si:H) in order to test those models of photo-induced degradation that postulate one-to-one correlation between light-induced deflects and O,C, or N impurity atoms. The drastic reduction is successfully achieved by a newly developed ultra-high vacuum (UHV) plasma-enhanced-chemical vapor-deposition (PECVD) system.