Experimention of the possibility of the defect photovoltaic effect

摘要

We have examined the possibility of the defect photovoltaic (PV) effect using the proton implantation and the rapid thermal annealing (RTA) under several conditions. In some samples, the increase of the output was observed owing to light scattering by the residual defects after the RTA. However, the defect PV effect by the infrared light with energy of less than Si bandgap was not confirmed in our experiments in the wide range of the proton dose and the RTA temperature and time.