Lattice parameter and density of Ge-Si solid solutions

摘要

Solid solutions of the Ge-Si system have been prepared by reaction under vacuum and gravity of the constituent elements followed by different quenching procedures. Least-squares refinement to the lattice parameters of the Ge-Si phase has been established in the composition range 0.5-0.9 at /100 Si. Almost homogeneous alloys were obtained by rapid quenching in liquid nitrogen, whereas pseudo-homogeneous alloys occur as an intermediate stage when quenched in water. The refined lattice parameters, although computed with very high precision, did not predict The formation rate of the solid solution.