COMPARISON OF HOT-CARRIERS EFFECTS IN SOI AND BULK DEVICES USING A PHOTON EMISSION TECHNIQUE

摘要

This paper concerns recent results on photon emission used for hot carriers degradation analysis. In a first part, we focus on quantitative light emission analysis on n- and p- channel MOSFETs for bulk and SOI technologies. On each device, the photon counts for different gate and drain voltages were measured and compared with the value of the substrate current. This shows that the measured value of the substrate current in SOI devices can be inaccurate. In a second part, we investigate light emission spectra for some specific biases. These measurements allow a clear comparison of the different technologies. Finally, a photon emission technique was used to analyse hot carrier degradation in circuits, the highest emissions are observed on NMOS transistors working at high frequencies, but emission have also been detected on PMOS transistors. A clear correlation with the working frequencies of the MOS has also been demonstrated.