Energy levels in rectangular quantum well wires based on a modified profile of the heterojunction

摘要

The effect of a spatially dependent effective mass on the energy levels in a rectangular quantum wire with finite barrier potential is considered. The heterojunction is modelled by an error function rather than a step function to more accurately model the material transition region at the interface between the two materials. The carrier ground state is calculated using the envelope function approximation for Ga_(0.47)In_(0..53)As/InP and GaAs/Ga_(0.63)Al_(0.37)As systems. The results are lower than those reported before, and are in better agreement with the experimental points.