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首页> 外文期刊>Physical Review. B, Condensed Matter >Evidence of topological insulator state in the semimetal LaBi
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Evidence of topological insulator state in the semimetal LaBi

机译:半金属LaBi中拓扑绝缘子状态的证据。

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摘要

By employing angle-resolved photoemission spectroscopy combined with first-principles calculations, we performed a systematic investigation on the electronic structure of LaBi, which exhibits extremely large magnetoresistance (XMR), and is theoretically predicted to possess band anticrossing with nontrivial topological properties. Here, the observations of the Fermi-surface topology and band dispersions are similar to previous studies on LaSb [L.-K. Zeng, R. Lou, D.-S. Wu, Q. N. Xu, P.-J. Guo, L.-Y. Kong, Y.-G. Zhong, J.-Z. Ma, B.-B. Fu, P. Richard, P. Wang, G. T. Liu, L. Lu, Y.-B. Huang, C. Fang, S.-S. Sun, Q. Wang, L. Wang, Y.-G. Shi, H. M. Weng, H.-C. Lei, K. Liu, S.-C. Wang, T. Qian, J.-L. Luo, and H. Ding, Phys. Rev. Lett. 117, 127204 (2016)], a topologically trivial XMR semimetal, except the existence of a band inversion along the Γ-X direction, with one massless and one gapped Dirac-like surface state at the X and Γ points, respectively. The odd number of massless Dirac cones suggests that LaBi is analogous to the time-reversal Z_2 nontrivial topological insulator. These findings open up a new series for exploring novel topological states and investigating their evolution from the perspective of topological phase transition within the family of rare-earth monopnictides.
机译:通过使用角度分辨光发射光谱结合第一性原理计算,我们对LaBi的电子结构进行了系统的研究,该LaBi表现出极大的磁阻(XMR),并且理论上预测其具有具有非平凡拓扑特性的能带反交叉。在这里,费米面拓扑结构和谱带色散的观察结果与以前关于LaSb [L.-K.曾R.楼.D.-S。吴琼N.徐鹏杰郭L.Y. Kong Y.-G.钟建中妈B-B Fu,P.Richard,P. Wang,G.T.Liu,L.L.,Y.-B. Huang C. Fang,S.-S。孙清​​旺,王林。施宏明翁汉忠雷磊,刘康。王T.钱,J.-L.罗和丁H.牧师117,127204(2016)],这是一种拓扑上琐碎的XMR半金属,除了沿Γ-X方向存在能带反转外,在X和Γ点分别具有一个无质量和一个带间隙的狄拉克状表面态。无质量的狄拉克锥的奇数表明LaBi类似于时间反转Z_2非平凡拓扑绝缘子。这些发现开辟了一个新的系列,用于探索新型拓扑状态并从稀土单素族中的拓扑相变的角度研究其演化。

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  • 来源
    《Physical Review. B, Condensed Matter》 |2017年第11期|115140.1-115140.6|共6页
  • 作者单位

    Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China;

    Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

    Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

    Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China;

    Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

    Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

    Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

    Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China,School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China,Collaborative Innovation Center of Quantum Matter, Beijing, China;

    Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

    Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, China;

    Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China;

    Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China;

    Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

    Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

    Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China;

    Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China;

    Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China,Collaborative Innovation Center of Quantum Matter, Beijing, China;

    Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China,Collaborative Innovation Center of Quantum Matter, Beijing, China;

    Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China,School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China,Collaborative Innovation Center of Quantum Matter, Beijing, China;

    Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China;

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