The Doping of Si p-Field-Effect Transistor Devices by Gallium Focused Ion Beam Implantation Enabling Flexible Fabrication Routes at Moderate Temperatures

摘要

A maskless approach of forming p-doped regions in Si wafers using the Gasource of a standard focused ion beam (FIB) system and the moderate activationtemperatures of 400–700°C is demonstrated in this work. This simple andflexible route is accessible to many research labs and is successfully used tofabricate Si-based diodes and field-effect transistors (FETs). For the diodes,tunneling is found to be the forward current transport mechanism. The fabricatedp-FET structures show excellent switching behavior with a high I_(D,ON)/I_(D,OFF) current ratio of 5 × 10~6.