Fabrication of GaN nanocrystallites and their application to UV/blue electroluminescent devices

摘要

The fabrication of UV/blue electroluminescent devices (ELDs) based on GaN nanocrystallites (NCs) is reported. The electroluminescence spectra of GaN NC-based ELDs included UV spectral regions. Some of the emission energy is higher than that of the GaN band-gap transition, which is due to the quantum size effect. The chemical bonding in GaN NCs was measured using X-ray photoelectron spectroscopy (XPS) with Ar ion beam etching (IBE). The results indicate that GaN NCs consist of a GaN core surrounded by an oxide shell.