MBE growth of AIN/GaN-based photovoltaic intersubband photodetectors

摘要

We report on the molecular-beam epitaxial growth, fabrication and characterization of AlN/GaN photovoltaic quantum well infrared photodetectors operating at 1.55 μm. Devices display a spectrally-narrow photovoltaic response to p-po-larizcd light in the near infrared at room temperature. Wernhave analysed the effect of the growth temperature, quantum well thickness, and number of periods in the active region, concluding that responsivity is enhanced by growing at relatively low temperature and by increasing the number of quantum wells.