Hole-polar phonon interaction scattering mobility in chain structured TISe_(0.75)S_(0.25) crystals

摘要

In this study, the electrical resistivity, charge carriers density and Hall mobility of chain structured TlSe_(0.75)S_(0.25) crystal have been measured and analyzed to establish the dominant scattering mechanism in crystal. The data analyses have shown that this crystal exhibits an extrinsic p-type conduction. The temperature-dependent dark electrical resistivity analysis reflected the existence of three energy levels located at 280 meV, 68 meV and 48 meV. The temperature dependence of carrier density was analyzed by using the single donor-single acceptor model. The carrier concentration data were best reproduced assuming the existence of an acceptor impurity level being located at 68 meV consistent with that observed from resistivity measurement. The model allowed the determination of the hole effective mass and the acceptor-donor concentration difference as 0.44m_0 and 2.2×10~(12)cm~3, respectively. The Hall mobility of the TlSe_(0.75)S_(0.25) crystal is found to be limited by the scattering of charged carriers over the (chain) boundaries and the scattering of hole-polar phonon interactions above and below 300 K, respectively. The value of the energy barrier height at the chain boundaries was found to be 261 meV. The polar phonon scattering mobility revealed the high-frequency and static dielectric constants of 13.6 and 15.0, respectively.