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机译:锰注入非极性a面GaN薄膜的结构,形貌和磁性
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P.R. China;
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P.R. China;
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P.R. China;
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P.R. China;
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P.R. China;
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P.R. China;
magnetic semiconductors; Ⅲ-Ⅴ semiconductors; chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.); impurity doping, diffusion and ion implantation technology;
机译:锰注入的非极性a面GaN薄膜的结构,形态和拉曼散射研究
机译:注入能量对Mn注入的非极性A面Gan膜特性的影响
机译:非极性a面GaN:Mn膜的结构和磁性
机译:非极性A平面GaN膜的太赫兹介质响应
机译:铁酞菁薄膜的形貌特征和准一维铁链的磁性。
机译:揭示ε-Fe2O3/ GaN(0001)外延膜的结构化学和磁性界面特性
机译:通过低压MOCVD在γ-LiAlO2(3 0 2)衬底上生长的非极性a面GaN膜