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Strain effect on the electronic and optical properties of CdSe nanosheet

机译:应变对CdSe纳米片的电子和光学性能的影响

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摘要

The electronic and optical properties of CdSe nanosheet under uniform strain are investigated using first-principles calculations. The band structure, density of states and optical spectra of CdSe nanosheet are calculated. The conduction bands are found to move towards the Fermi energy when strain changes from compressive to tensile. This leads to a decrease in the energy bandgap. Optical properties also show strong dependence on strain. The peaks of the dielectric function are mapped with corresponding electron transitions between the bands. All peaks experiences redshifts under increasing strain. This phenomenon is explained via the analysis on the band structures. Other optical properties including the index of refraction, the extinction coefficient, the reflectivity, the absorption coefficient, and the energy-loss function were also calculated to investigate the mechanism of optical transitions of CdSe nanosheet.
机译:使用第一性原理计算研究了CdSe纳米片在均匀应变下的电子和光学性质。计算了CdSe纳米片的能带结构,态密度和光谱。当应变从压缩变化为拉伸时,发现导带向费米能量移动。这导致能带隙减小。光学性质也显示出对应变的强烈依赖性。介电函数的峰与谱带之间的相应电子跃迁对应。所有峰在不断增加的应变下都会经历红移。通过对能带结构的分析可以解释这种现象。还计算了其他光学性质,包括折射率,消光系数,反射率,吸收系数和能量损失函数,以研究CdSe纳米片的光学跃迁机理。

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  • 来源
    《Physica status solidi》 |2014年第4期|952-957|共6页
  • 作者单位

    Department of Physics, Shanghai Normal University, Shanghai 200234, P.R. China;

    Department of Physics, Shanghai Normal University, Shanghai 200234, P.R. China;

    School of Arts and Sciences, MCPHS University, Boston, Massachusetts 02115, USA;

    Department of Physics, Shanghai Normal University, Shanghai 200234, P.R. China;

    Department of Physics, Shanghai Normal University, Shanghai 200234, P.R. China;

    Department of Physics, Shanghai Normal University, Shanghai 200234, P.R. China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    cadmium selenide; electronic properties; nanosheet; optical properties; strain;

    机译:硒化镉电子性能;纳米片光学性质应变;

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