Stable MoS_2 Field-Effect Transistors Using TiO_2 Interfacial Layer at Metal/MoS_2 Contact

摘要

Molybdenum disulphide (MoS_2) is an emerging 2-dimensional (2D) semiconductor for electronic devices. However, unstable and low performance of MoS_2 FETs is an important concern. In this study, inserting an atomic layer deposition (ALD) titanium dioxide TiO_2 interfacial layer between contact metal and MoS_2 channel is suggested to achieve more stable performances. The reduced threshold voltage (V_(TH)) shift and reduced series resistance (R_(SD)) were simultaneously achieved.