Selective creation of colour centres and peaks of thermally stimulated luminescence by VUV photons in LiF single crystals

摘要

Processes of radiation creation and annealing of Frenkel defects as well as electron-hole processes have been studied in LiF single crystals with a various content of impurity ions by means of highly sensitive method of thermally stimulated luminescence (TSL) and other optical methods. In highly pure LiF crystals, X-irradiated at 4.2 K, the TSL peaks connected with the annealing of interstitial fluorine ions (25-40 K) or atoms, i.e. H centres (50-65 K) and self-trapped holes (120-140 K) have been separated. For the first time, the creation spectra of the TSL peaks at 480 and 550 K by 10-33 eV-photon irradiation at 295 K have been measured. The anomalously high creation efficiency of the TSL peak at 480 K by 11.7-12.3 eV and 26-27 eV photons is interpreted as the creation of near-impurity electronic excitations both, directly by photons and by hot conduction electrons.