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机译:在1.5μm应用中具有子带间跃迁的非极性立方GaN / AlN多量子阱的生长
Department of Physics, University of Paderborn, Warburger Str. 100, 33095 Paderborn, Germany;
Department of Physics, University of Paderborn, Warburger Str. 100, 33095 Paderborn, Germany;
Department of Physics, University of Paderborn, Warburger Str. 100, 33095 Paderborn, Germany;
Department of Physics, University of Paderborn, Warburger Str. 100, 33095 Paderborn, Germany;
Department of Electrical Engineering, University of Arkansas, 3217 Bell Engineering Center, Fayetteville, Arkansas 72701, USA;
Department of Electrical Engineering, University of Arkansas, 3217 Bell Engineering Center, Fayetteville, Arkansas 72701, USA;
Ⅲ-Ⅴ and Ⅱ-Ⅵ semiconductors; Ⅱ-Ⅵ semiconductors; multilayers; superlattices; molecular; atomic; ion; and chemical beam epitaxy;
机译:蓝宝石上分子束外延生长的GaN / AlN多量子阱中1.5-3.5μm的子带间吸收
机译:基于非极性GaN的谐振声子缺失的IntersubBand转换为太赫兹排放的多量子阱
机译:子带间应用的GaN / AlN多量子阱的结构和光学性质
机译:非极性立方GaN / AIN多量子阱的生长具有三通带转换的1.5μm应用
机译:氮化铝镓/氮化镓量子阱的分子束外延生长以及激子和子带间跃迁的研究。
机译:GaN / InGaN多量子阱中的子带间跃迁
机译:GaN / AlN多量子阱和基于氮化物的波导结构,可利用子带间跃迁实现超快全光开关