CdSe polycrystalline films have been prepared on ultra-clean glass substrates by a screen-printing technique and then annealed in air. The films prepared by this technique are comparatively thicker than those prepared by other, more sophisticated techniques and optimum conditions for preparing good quality screen-printed films have been found. The optical band gaps (E g) of the films were determined by UV transmission spectroscopy. The zinc-blende structure of the films was confirmed by X-ray diffraction analysis. The Schottky barrier height and the ideality factor for Al/CdSe junctions were determined from current-voltage characteristics. The DC conductivity of the films was measured in vacuum by a two-probe technique.View full textDownload full textKeywordsCdSe, screen printing, band gap, barrier height, X-ray diffraction, electrical conductivity, films, II-VI semiconductors, materials characterisations, optical properties, photovoltaics, sinteringRelated var addthis_config = { ui_cobrand: "Taylor & Francis Online", services_compact: "citeulike,netvibes,twitter,technorati,delicious,linkedin,facebook,stumbleupon,digg,google,more", pubid: "ra-4dff56cd6bb1830b" }; Add to shortlist Link Permalink http://dx.doi.org/10.1080/09500831003767005
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机译：已经通过丝网印刷技术在超净玻璃基板上制备了CdSe多晶膜，然后在空气中进行退火。通过这种技术制备的膜比通过其他更复杂的技术制备的膜厚，并且已经发现用于制备高质量丝网印刷膜的最佳条件。膜的光学带隙（E g ）通过紫外透射光谱法确定。通过X射线衍射分析确认了膜的锌共混物结构。 Al / CdSe结的肖特基势垒高度和理想因子由电流-电压特性确定。薄膜的直流电导率是通过双探针技术在真空中测量的。查看全文下载全文关键词CdSe，丝网印刷，带隙，势垒高度，X射线衍射，电导率，薄膜，II-VI半导体，材料特性，光学特性，光伏技术，烧结相关变量var addthis_config = {ui_cobrand：“泰勒和弗朗西斯在线”，servicescompact：“ citlikelike，netvibes，twitter，technorati，delicious，linkedin，facebook，stumbleupon，digg，google，更多”，发布：“ ra- 4dff56cd6bb1830b“};添加到候选列表链接永久链接http://dx.doi.org/10.1080/09500831003767005
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