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Effects of annealing temperature on structural, optical, and electrical properties of antimony-doped tin oxide thin films

机译:退火温度对掺锑氧化锡薄膜结构,光学和电学性质的影响

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Antimony-doped tin oxide (ATO) films, approximately 320 nm in thickness, have been prepared by electron beam evaporation onto glass substrates. The films were annealed at temperatures between 400°C and 550°C in air and their structure and surface morphologies were observed by X-ray diffraction (XRD) and atomic force microscopy (AFM) after the different annealing treatments. XRD patterns of the ATO thin films as-deposited and annealed at 400°C showed that they were amorphous, but annealing beyond 400°C caused the films to become polycrystalline with tetragonal structure and orientated in the (1 1 0) direction. The grain size in the annealed films, obtained from the XRD analysis, was in the range 146-256 à and this increased with the annealing temperature. The dislocation density, cell volume and strain were found to decrease gradually with increasing annealing temperature. Photoluminescence spectra revealed an intensive blue/violet peak at 420 nm, which increased gradually in height with annealing. It is suggested that an increase in the population of Sb+5 ions might be the reason for the enhancement of the blue/violet emission. The optical properties of the films were also investigated in the UV-visible-NIR region (300-1000 nm). The optical constants, namely the refractive index n and the extinction coefficient k in the visible region were calculated. The optical energy band gap, as determined by the dependence of the absorption coefficient on the photon energy at short wavelengths, was found to increase from 3.59 to 3.76 eV with annealing temperature.View full textDownload full textKeywordsannealing process, X-ray diffraction, photoluminescence, atomic force microscopy, optical propertiesRelated var addthis_config = { ui_cobrand: "Taylor & Francis Online", services_compact: "citeulike,netvibes,twitter,technorati,delicious,linkedin,facebook,stumbleupon,digg,google,more", pubid: "ra-4dff56cd6bb1830b" }; Add to shortlist Link Permalink http://dx.doi.org/10.1080/09500831003662529
机译:通过电子束蒸发到玻璃基板上,制备了厚度约为320 nm的掺锑氧化锡(ATO)膜。薄膜在空气中在400°C至550°C之间的温度下退火,经过不同的退火处理后,通过X射线衍射(XRD)和原子力显微镜(AFM)观察了它们的结构和表面形态。沉积和在400°C退火的ATO薄膜的XRD图谱显示它们是非晶态的,但是在400°C以上退火会导致薄膜变成具有四方结构的多晶并沿(1 1 0)方向取向。通过XRD分析获得的退火膜的晶粒尺寸在146-256范围内,并且随着退火温度的增加而增加。发现位错密度,晶胞体积和应变随着退火温度的升高而逐渐降低。光致发光光谱显示在420 nm处出现强烈的蓝/紫峰,随着退火,其高度逐渐增加。提示Sb +5 离子的数量增加可能是蓝色/紫色发射增强的原因。还在紫外-可见-近红外区域(300-1000 nm)内研究了薄膜的光学性能。计算光学常数,即在可见光区域的折射率n和消光系数k。发现由吸收系数对短波长光子能量的依赖性决定的光能带隙随退火温度从3.59 eV增加到3.76 eV。查看全文下载全文关键词退火工艺,X射线衍射,光致发光,原子力显微镜,光学性质,相关变量var addthis_config = {ui_cobrand:“泰勒和弗朗西斯在线”,servicescompact:“ citeulike,netvibes,twitter,technorati,delicious,linkedin,facebook,stumbleupon,digg,google,更多”,pubid:“ ra- 4dff56cd6bb1830b“};添加到候选列表链接永久链接http://dx.doi.org/10.1080/09500831003662529

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