Low-operating-voltage polymeric transistor with solution-processed low-k polymer/high-k metal-oxide bilayer insulators

摘要

We have successfully demonstrated a polymeric semiconductor-based transistor with low-k polymer/high-k metal-oxide (TiO_2) bilayer as gate dielectric. The TiO_2 layers are readily processable from solution and cured at low temperature, instead of traditionally sputtering or high temperature sintering process, thus may suitable for a low-cost organic field effect transistors (FETs) manufacture. The low-k polymer capped on TiO_2 layer could further smooth the TiO_2 dielectric surface and suppress the leakage current from grain boundary of TiO_2 films. The resulting unpatented P3HT-OFETs could operate with supply voltage less than 10 V and the mobility and threshold voltage were 0.0140 cm~2/Vs and 1.14 V, respectively. The on/off ratio was 1.0 × 10~3.