Hybrid Inorganic/organic complementary circuits using PEALD ZnO and ink-jet printed diF-TESADT TFTs

摘要

We report hybrid organic/inorganic complementary circuits using ink-jet-printed fluori-nated 5,11-bis(triethylsilyiethynyl) anthradithiophene (diF-TESADT) as the p-channel material and zinc oxide deposited by plasma enhanced atomic layer deposition (PEALD) as the n-channel material. Using a mixed solvent system, discrete ink-jet printed diF-TESADT OTFTs have field effect mobility as large as 0.4 cm~2/V s. PEALD ZnO TFTs typically have field-effect mobility ＞15 cm~2/V s. Using p-type diF-TESADT and n-type ZnO active layers in a simple, 4-mask, 1 ink jet printing step, low temperature (≤ 200 ℃ process we fabricated complimentary MOS (CMOS) inverters with maximum voltage gain of 35 and sub-pA leakage currents for both low and high input levels.